Puyang Huang
About Me
I am a Ph.D. student in the Electrical Engineering Departement at Stanford University, under the supervision of Prof. Shan X. Wang. Before that, I obtained my Bachelor degree in Electrical and Computer Engineering from Shanghai Jiao Tong University (SJTU) and Master degree in Electronic Science and Technology from ShanghaiTech University.
Research Interests
My current research interest is spin-orbit torque (SOT) related physics as well as novel computing network applications based on MRAM.
- Spin Orbit Torque and Voltage Controlled Magnetic Anisotropy
- Mganetic Random Access Memory
- Neuromorphic Computing
News
- [Jun. 2025] Transfer to Stanford University and start my Summer First Fellow program.
- [May. 2025] Our paper Tunable chiral magneto-transport through band structure engineering in magnetic topological insulators Mn(Bi1-xSbx)2Te4 is published on Science Advances.
- [Oct. 2024] Our paper Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-based Spin-Orbit Torque Devices is published on ACS Nano.
- [Sept. 2024] Start my Ph.D. journey at UCLA.
- [Sept. 2024] Our paper Field-Free Rashba-Type Crystal Torque MRAM with High Efficiency and Thermal Stability is accepted by IEDM2024!
Publications
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Sci. Adv.
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IEDM
IEEE International Electron Devices Meeting (IEDM), 2024. -
Adv. Funct. Mater.
Advanced Functional Materials, 2023 -
IEEE T. MAGN.
IEEE Transactions on Magnetics, 2023
ACS Nano
arXiv
Services
Journal Reviewers
- Nano Letters