Puyang Huang

About Me

I am a Ph.D. student in the Electrical Engineering Departement at Stanford University, under the supervision of Prof. Shan X. Wang. Before that, I obtained my Bachelor degree in Electrical and Computer Engineering from Shanghai Jiao Tong University (SJTU) and Master degree in Electronic Science and Technology from ShanghaiTech University.

Research Interests

My current research interest is spin-orbit torque (SOT) related physics as well as novel computing network applications based on MRAM.

• Magnetic Random Access Memory
• Neuromorphic Computing
• In-memory Computing

News

• [Sept. 2026] Our paper Spin orbit torque magnetic tunneling junction for noise-tolerant and resource-saving probabilistic binary neural network is published on Applied Physics Reviews.
• [Jun. 2026] Our review paper Next-generation MRAM technologies and their emerging roles in artificial intelligence is published on Journal of Magnetism and Magnetic Materials.
• [Apr. 2026] Our paper 12-inch bottom-pinned VCMA-MRAM devices with 0.6 ns switching speed, 30 fJ/bit write energy, and 10¹⁴ endurance is published on IEEE Electron Device Letters.
• [Dec. 2025] Our paper Antiferromagnetic Materials Exhibiting Unconventional Properties is published on Advanced Functional Materials.
• [Jun. 2025] Transfer to Stanford University and start my Summer First Fellow program.
• [May. 2025] Our paper Tunable chiral magneto-transport through band structure engineering in magnetic topological insulators Mn(Bi_1-xSb_x)₂Te₄ is published on Science Advances.
• [Oct. 2024] Our paper Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-based Spin-Orbit Torque Devices is published on ACS Nano.
• [Sept. 2024] Start my Ph.D. journey at UCLA.
• [Sept. 2024] Our paper Field-Free Rashba-Type Crystal Torque MRAM with High Efficiency and Thermal Stability is accepted by IEDM2024!

Publications

Services

Journal Reviewers

• Nano Letters
• Silicon
• npj Spintronics